SSM3K15FV
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K15FV
High Speed Switching Applications Analog Switch Applications
Unit: mm
0.
22±0.
05
0.
32±0.
05
• Optimum for high-density mounting in small packages • Low on-resistance
: RDS(ON) = 4.
0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.
0 Ω (max) (@VGS = 2.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
1.
2±0.
05 0.
8±0.
05 0.
4 0.
4
1.
2±0.
05 0.
8±0.
05
1 3
Characteristics
Symbol
Rating
Unit
2
0.
13±0.
05
Drain-source voltage Gate-source voltage
Drain current
Power dissipation Channel temperature Storage temperature
VDS
30
V
VGSS
±20
V
DC
ID
Pulse
IDP
100 mA
200
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
0.
5±0...