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SSM3K15FS

Toshiba Semiconductor
Part Number SSM3K15FS
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 28, 2005
Detailed Description SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Analog...
Datasheet PDF File SSM3K15FS PDF File

SSM3K15FS
SSM3K15FS

Overview
SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Analog Switching Applications Unit: mm • Compact package suitable for high-density mounting • Low ON-resistance : Ron = 4.
0 Ω (max) (@VGS = 4 V) : Ron = 7.
0 Ω (max) (@VGS = 2.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V DC Drain current ID 100 mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
TOSHIBA 2-2H1B Weight: 2.
4 mg (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production 2001-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance O...


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