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Part Number
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TSM1N60L |
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Manufacturer
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Taiwan Semiconductor |
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Description
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600V N-Channel Power MOSFET |
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Published
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Feb 22, 2008 |
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Detailed Description
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TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition: 1. Gate
2. Drain 3. Source
PRODUCT SUMMARY
VDS (...
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Datasheet
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TSM1N60L
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Overview
TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition: 1.
Gate
2.
Drain 3.
Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 12 @ VGS =10V
ID (A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge c...
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