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TSM1N60S

Taiwan Semiconductor
Part Number TSM1N60S
Manufacturer Taiwan Semiconductor
Description 600V N-Channel Power MOSFET
Published Feb 22, 2008
Detailed Description TO-92 Pin Definition: 1. Gate 2. Drain 3. Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(o...
Datasheet PDF File TSM1N60S PDF File

TSM1N60S
TSM1N60S

Overview
TO-92 Pin Definition: 1.
Gate 2.
Drain 3.
Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (A) 0.
3 General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits...


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