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GT60N322
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT60N322
Voltage Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.
11 μs (typ.
) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.
4 V (typ.
) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCE...