Part Number
|
APT35GP120B2DQ2G |
Manufacturer
|
Advanced Power Technology |
Description
|
POWER MOS 7 IGBT |
Published
|
May 7, 2008 |
Detailed Description
|
TYPICAL PERFORMANCE CURVES ®
APT35GP120B2DQ2 APT35GP120B2DQ2G*
APT35GP120B2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb...
|
Datasheet
|
APT35GP120B2DQ2G
|
Overview
TYPICAL PERFORMANCE CURVES ®
APT35GP120B2DQ2 APT35GP120B2DQ2G*
APT35GP120B2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
T-Max®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • RBSOA Rated
G
C
E
C G E
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DataSheet4U.
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MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ...
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