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APT35GP120B2DQ2 Datasheet PDF


Part Number APT35GP120B2DQ2
Manufacturer Advanced Power Technology
Title POWER MOS 7 IGBT
Description TYPICAL PERFORMANCE CURVES ® APT35GP120B2DQ2 APT35GP120B2DQ2G* APT35GP120B2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. PO...
Features and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = V...

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Datasheet APT35GP120B2DQ2 PDF File








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APT35GP120B2DQ2G : TYPICAL PERFORMANCE CURVES ® APT35GP120B2DQ2 APT35GP120B2DQ2G* APT35GP120B2DQ2(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • RBSOA Rated G C E C G E www.DataSheet4U.com MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current .




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