Part Number
|
WFW9N90 |
Manufacturer
|
Wisdom technologies |
Description
|
N-Channel MOSFET |
Published
|
Jun 25, 2008 |
Detailed Description
|
PROVISIONAL
Wisdom Semiconductor
WFW9N90
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.3 Ω )@VGS=10V Gate Charge (Typi...
|
Datasheet
|
WFW9N90
|
Overview
PROVISIONAL
Wisdom Semiconductor
WFW9N90
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.
3 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
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2.
Drain
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1.
Gate {
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3.
Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies.
TO-247
G DS
Absolute Maximum Ratings
Symbol
VDSS ID IDM V...
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