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WFW9N70

Wisdom technologies
Part Number WFW9N70
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Feb 1, 2016
Detailed Description Wisdom Semiconductor WFW9N70 N-Channel MOSFET Features ■ RDS(on) (Max 1.2 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ ...
Datasheet PDF File WFW9N70 PDF File

WFW9N70
WFW9N70

Overview
Wisdom Semiconductor WFW9N70 N-Channel MOSFET Features ■ RDS(on) (Max 1.
2 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1.
Gate{ TO-247 { 2.
Drain ● ◀▲ ● ● { 3.
Source G DS A...


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