PRELIMINARY
CRF24010
10 W, SiC RF Power MESFET
Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect
Transistor (MESFET).
SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
SiC MESFETs offer greater efficiency, greater power com density, and wider bandwidths compared to Si and GaAs
transistors.
Package Type s: 44 PN’s: CRF240 0196 and 440166 10P and CR F24010F
FEATURES • • • • • • • 15 dB Small Signal Gain High Efficiency 10 W minimum P1dB Up to 2700 MHz Operation 48 V Operation High Breakdown Voltage High...