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CRF24010D

Cree
Part Number CRF24010D
Manufacturer Cree
Description SiC RF Power MESFET
Published Jun 26, 2008
Detailed Description PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconduc...
Datasheet PDF File CRF24010D PDF File

CRF24010D
CRF24010D

Overview
PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET).
SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
SiC MESFETs offer greater power density and wider bandwidths compared www.
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com to Si and GaAs transistors.
PN: CRF240 10D FEATURES APPLICATIONS • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 5 GHz Operation High Efficiency • • • • • • Wideband Military Communicati...


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