HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200508 Issued Date : 2005.
08.
01 Revised Date : 2005.
10.
06 Page No.
: 1/4 H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1 2 3 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 4 Description This N-Channel 2.
5V specified MOSFET is a rugged gate version of advanced trench process.
It has been optimized for power management applications with a com wide range of gate drive voltage (2.
5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.
5V, ID=5.
2A; RDS(on)=30mΩ@VGS=4.
5V, ...

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