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H9926TS

Hi-Sincerity Mocroelectronics
Part Number H9926TS
Manufacturer Hi-Sincerity Mocroelectronics
Description Dual N-Channel Enhancement-Mode MOSFET
Published Jul 3, 2008
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. :...
Datasheet PDF File H9926TS PDF File

H9926TS
H9926TS

Overview
HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200513 Issued Date : 2005.
10.
01 Revised Date : 2005.
10.
06 Page No.
: 1/4 H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment 8 7 6 5 Description This N-Channel 2.
5V specified MOSFET is a rugged gate version of advanced trench process.
It has been optimized for power management applications with a www.
DataSheet4U.
com wide range of gate drive voltage (2.
5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.
5V, ID=5.
2A; RDS(on)=30mΩ@VGS=4.
5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications H9926CTS Symbol & Pin Assignment 8 7 6 5 Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Applications • Battery Protection • Load Switch • Power Management Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6 30 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient *2 o 1.
5 0.
96 -55 to +150 83 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9926TS, H9926CTS HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol • Static BVDSS RDS(on) VGS(th) www.
DataSheet4U.
com IDSS IGSS gFS • Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Tr...


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