N-CHANNEL 900V - 1.
1 Ω - 7.
6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC90Z com s TYPICAL s STW8NC90Z VDSS 900 V RDS(on) 1.
38 Ω ID 7.
6 A s s s RDS(on) = 1.
1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS s...

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