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STW8NC90Z

Part Number	STW8NC90Z
Manufacturer	STMicroelectronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Published	Jul 15, 2008
Detailed Description	N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC90Z www.DataSheet4U.com s TYPICAL s...
Datasheet	STW8NC90Z PDF File

Overview

N-CHANNEL 900V - 1.
1 Ω - 7.
6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC90Z www.
DataSheet4U.
com s TYPICAL s STW8NC90Z VDSS 900 V RDS(on) < 1.
38 Ω ID 7.
6 A s s s RDS(on) = 1.
1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (cont...

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STW8NC90Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS - STMicroelectronics

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