AON3812 Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
www.
DataSheet4U.
com provide
Features
VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) 27mΩ (VGS = 10V) RDS(ON) 30mΩ (VGS = 4.
5V) RDS(ON) 40mΩ (VGS = 2.
5V)
The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications).
D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 G1...