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AON3814

Alpha & Omega Semiconductors
Part Number AON3814
Manufacturer Alpha & Omega Semiconductors
Description 20V Dual N-Channel MOSFET
Published Jul 21, 2008
Detailed Description AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to ...
Datasheet PDF File AON3814 PDF File

AON3814
AON3814

Overview
AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
VDS ID (at VGS=4.
5V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 4V) RDS(ON) (at VGS = 3.
1V) RDS(ON) (at VGS = 2.
5V) ESD Protected 20V 6A < 17mW < 18.
5mW < 23mW < 24mW Top View DFN 3x3 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 G1 D1 D1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current F TC=70°C Pulsed Drain Current B ID IDM TC=25°C Power Dissipation F TC=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 6 5.
3 40 2.
5 1.
6 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 40 75 30 Max 50 95 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 6.
0:July 2019 www.
aosmd.
com Page 1 of 5 AON3814 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250mA, VGS=0V VDS=20V, VGS=0V VDS=0V, VGS= ±10V VDS=VGS ID=250mA VGS=4.
5V, VDS=5V VGS=4.
5V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4V, ID=6A VGS=3.
1V, ID=6A VGS=2.
5V, ID=6A VGS=1.
8V, ID=6A Forward Transconductance VDS=5V, ID=6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitanc...


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