SSM6J50TU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU
○ High Current Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low on-resistance:
Ron = Ron = Ron =
205mΩ (max) (@VGS = -2.
0 V) 100mΩ (max) (@VGS = -2.
5 V)
64mΩ (max) (@VGS = -4.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC
ID
-2.
5
A
Pulse
IDP
-5
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation Channel temperature
PD
500
mW
(Note 1)
Tch
150
°C
JEDEC
-
Storage temperature range
Tstg
−55 to 150
°C
JEITA
...