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SSM6J505NU

Toshiba Semiconductor
Part Number SSM6J505NU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 14, 2014
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate...
Datasheet PDF File SSM6J505NU PDF File

SSM6J505NU
SSM6J505NU

Overview
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1.
Applications • Power Management Switches 2.
Features (1) 1.
2 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.
2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment UDFN6B SSM6J505NU 1.
2.
5.
6 Drain 3.
Gate 4.
Source ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2021-09-17 Rev.
5.
0 SSM6J505NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±6 Drain current (DC) (Note 1) ID -12 A Drain current (pulsed) (Note 1),(Note 2) IDP -30 Power dissipation Power dissipation Channel temperature (Note 3) PD t ≤ 10 s (Note 3) PD Tch 1.
25 W 2.
5 W 150 � Storage temperatu...


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