Freescale Semiconductor Technical Data
MRF9060 Rev.
8, 12/2004
RF Power Field Effect
Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment.
• Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc
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MRF9060LR1 MRF9060LSR1
• Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 V...