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MRF9060LSR1

Part Number	MRF9060LSR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Aug 7, 2008
Detailed Description	Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancemen...
Datasheet	MRF9060LSR1 PDF File

Overview

Freescale Semiconductor Technical Data MRF9060 Rev.
8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment.
• Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc www.
DataSheet4U.
com MRF9060LR1 MRF9060LSR1 • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • In Tape and Reel.
R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40µ″ Nominal.
945 MHz, 60 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 360B−05, STYLE 1 NI−360 MRF9060LR1 CASE 360C−05, STYLE 1 NI−360S MRF9060LSR1 Table 1.
Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDSS VGS PD Value − 0.
5, +65 − 0.
5, + 15 159 0.
91 219 1.
25 − 65 to +150 200 Unit Vdc Vdc W W/°C W W/°C °C °C Storage Temperature Range Operating Junction Temperature Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Symbol RθJC Value 1.
1 0.
8 Unit °C/W Table 3.
ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
© Freescale Semiconductor, Inc.
, 2004.
All rights reserved.
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