FQP8N25
May 2000
QFET
FQP8N25
250V N-Channel MOSFET
General Description Features
• • • • • • 8.
0A, 250V, RDS(on) = 0.
55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, com planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, sw...