DatasheetsPDF.com

FQP8N90C

Fairchild Semiconductor
Part Number FQP8N90C
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Aug 11, 2008
Detailed Description FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode p...
Datasheet PDF File FQP8N90C PDF File

FQP8N90C
FQP8N90C

Overview
FQP8N90C/FQPF8N90C QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.
DataSheet4U.
com planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
® Features • • • • • • 6.
3A, 900V, RDS(on) = 1.
9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)