PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.
16-2004 WiMAX Fixed Access applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.
3-3.
9GHz WiMAX and BWA amplifier applications.
The
transistor is available in a com flange package.
Package Type : 440166 PN: CGH3501 5F
Typical Performance 3.
4-3.
9GHz
(TC = 25˚C)
Parameter Gain @ POUT = 2 W POUT @ 2.
0 % EVM Drain Efficiency @ 2.
0 % EVM Input Return Loss
3.
4 GHz 11.
6 33.
0 23.
0 4.
0
3.
5 GHz 11.
8 33.
0 23.
0 4.
5
3.
6 GHz 12.
0 33.
0 24...