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CGH35015F

Part Number	CGH35015F
Manufacturer	Cree
Description	GaN HEMT
Published	Aug 18, 2008
Detailed Description	PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high ele...
Datasheet	CGH35015F PDF File

Overview

PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.
16-2004 WiMAX Fixed Access applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.
3-3.
9GHz WiMAX and BWA amplifier applications.
The transistor is available in a www.
DataSheet4U.
com flange package.
Package Type : 440166 PN: CGH3501 5F Typical Performance 3.
4-3.
9GHz (TC = 25˚C) Parameter Gain @ POUT = 2 W POUT @ 2.
0 % EVM Drain Efficiency @ 2.
0 % EVM Input Return Loss 3.
4 GHz 11.
6 33.
0 23.
0 4.
0 3.
5 GHz 11.
8 33.
0 23.
0 4.
5 3.
6 GHz 12.
0 33.
0 24...

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