Part Number
|
IXSP10N60B2D1 |
Manufacturer
|
IXYS Corporation |
Description
|
High Speed IGBT |
Published
|
Aug 19, 2008 |
Detailed Description
|
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
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IXSA 10N60B2D1 IXSP ...
|
Datasheet
|
IXSP10N60B2D1
|
Overview
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
www.
DataSheet4U.
com
IXSA 10N60B2D1 IXSP 10N60B2D1
VCES = 600 V = 20 A I C25 V CE(sat) = 2.
5 V
D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.
8 VCES 10 100 -55 .
.
.
+150 150 -55 .
.
.
+150 300 250 (TO-220) V V V V A A A A A µs W °C °C °C °C °C g Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(s...
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