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IXSP10N60B2D1

Part Number	IXSP10N60B2D1
Manufacturer	IXYS Corporation
Description	High Speed IGBT
Published	Aug 19, 2008
Detailed Description	High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP ...
Datasheet	IXSP10N60B2D1 PDF File

Overview

High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.
DataSheet4U.
com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.
5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.
8 VCES 10 100 -55 .
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+150 150 -55 .
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+150 300 250 (TO-220) V V V V A A A A A µs W °C °C °C °C °C g Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(s...

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IXSP10N60B2D1 High Speed IGBT - IXYS Corporation

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