2SK1807
Silicon N-Channel MOS FET
Application
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High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1807
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % www.
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Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 900 ±3...