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K1803

Panasonic
Part Number K1803
Manufacturer Panasonic
Description Silicon N-Channel MOSFET
Published Feb 9, 2015
Detailed Description Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS...
Datasheet PDF File K1803 PDF File

K1803
K1803

Overview
Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 900 ±30 ±8 ±16 60 Allowable power dissipation TC = 25°C Ta = 25°C PD 100 3 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 1.
9mH, IL = 8A, VDD = 50V, 1 pulse Unit V V A A mJ W °C °C s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage VDSS Gate threshold voltage Vth Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Diode forward voltage VDSF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 4A VDD = 200V, RL = 50Ω 16.
2±0.
5 21.
0±0.
5 12.
5 3.
5 15.
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2 0.
7 15.
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3 11.
0±0.
2 φ3.
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1 unit: mm 5.
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2 3.
2 2.
0±0.
2 2.
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1 1.
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1 0.
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2 5.
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5 123 1: Gate 2: Drain 3: Source TOP-3 Full Pack Package (a) Solder Dip min typ max Unit 0.
1 mA ±1 µA 900 V 1 5V 1.
3 1.
7 Ω 3 5.
5 S −1.
6 V 1800 pF 200 pF 90 pF 100 ns 80 ns 250 ns 1.
25 °C/W 1 Power F-MOS FETs Drain current ID (A) ID  VDS 16 14 VGS=15V 10V 12 7V TC=25˚C 10 6V 8 6 4 5V ...


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