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Part Number
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SII100N12 |
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Manufacturer
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Sirectifier Semiconductors |
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Description
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NPT IGBT Modules |
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Published
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Aug 26, 2008 |
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Detailed Description
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SII100N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
com
Absolute Maximum Ratings Symbol VCES IC...
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Datasheet
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SII100N12
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Overview
SII100N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.
0394")
com
Absolute Maximum Ratings Symbol VCES IC ICRM VGES
Ptot TVj,(Tstg) Visol RthJC RthJCD
o
TC = 25oC, unless otherwise specified Conditions
Values 1200 145(100) 290(200) _ +20 700 _ 40.
.
.
+125(150) 2500 _ 0.
18
o
Units V A A V
W C
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION AC, 1min
V
K/W
_ 0.
36
Sirectifier
R
SII100N12
NPT IGBT Modules
Electeical Characteristics
Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =4mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following condi...
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