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SII100N06

Sirectifier Semiconductors
Part Number SII100N06
Manufacturer Sirectifier Semiconductors
Description NPT IGBT
Published Aug 26, 2008
Detailed Description SII100N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com TC = 25oC, unless otherwise specified C...
Datasheet PDF File SII100N06 PDF File

SII100N06
SII100N06

Overview
SII100N06 NPT IGBT Modules Dimensions in mm (1mm = 0.
0394") www.
DataSheet4U.
com TC = 25oC, unless otherwise specified Conditions Values 600 130(100) 200 445 _ +20 100 200 1.
25 2500 Absolute Maximum Ratings Symbol Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(70)oC ICRM TC= 70oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII100N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.
5mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres IC =100A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min.
4.
5 typ.
5.
5 1(1000) max.
6.
5 500 400 Units V uA nA V nF nH A 1.
95(2.
2) 2.
45(-) 4.
3 0.
4 40 450 LCE o www.
DataSheet4...


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