2SA104

2SA100 : www.DataSheet4U.com www.DataSheet4U.com .

2SA1001 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHA.

2SA1002 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1002 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELE.

2SA1003 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1003 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELE.

2SA1006 : This Material Copyrighted By Its Respective Manufacturer .

2SA1006 : ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W .

2SA1006A : This Material Copyrighted By Its Respective Manufacturer .

2SA1006A : ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg .

2SA1006A : ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W .

2SA1006B : This Material Copyrighted By Its Respective Manufacturer .

2SA1006B : ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg S.

2SA1006B : ·With TO-220 package ·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -5 -1.5 -3.0 1.5 W .

2SA1007 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SC2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Po.

2SA1008 : ·With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SA1008 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2..

2SA1008 : ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Fast Switching Speed ·Complement to Type 2SC2331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@ TC=25℃ 15 TJ .

2SA1009 : ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0.3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A PC Collector Power Dissipation@ Ta=25℃ 15 W TJ Junction Temperature 150 ℃ Tst.

2SA1009 : .