SSM3K7002F
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications Analog Switch Applications
Unit: mm
• Small package • Low ON-resistance : Ron = 3.
3 Ω (max) (@VGS = 4.
5 V)
: Ron = 3.
2 Ω (max) (@VGS = 5 V) : Ron = 3.
0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
+0.
5 2.
5-0.
3
+0.
25 1.
5-0.
15
1
2
3
+0.
1 0.
4-0.
05
2.
9±0.
2 1.
9 0.
95 0.
95
0.
3 +0.
1 0.
16-0.
06
Characteristics
Symbol
Rating
Unit
+0.
2 1.
1-0.
1
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
± 20
V
0~0.
1
Drain current
DC Pulse
ID
200
mA
IDP
800
Drain power dissipation (Ta = 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage tem...