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SSM3K7002BFS

Toshiba Semiconductor
Part Number SSM3K7002BFS
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFS High-Speed Switching Appl...
Datasheet PDF File SSM3K7002BFS PDF File

SSM3K7002BFS
SSM3K7002BFS

Overview
SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON-resistance : RDS(ON) = 3.
3 Ω (max) (@VGS = 4.
5 V) : RDS(ON) = 2.
6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.
1 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Power dissipation PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the applicat...


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