SSM3K7002FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications Analog Switch Applications
• Small package • Low ON resistance : Ron = 3.
3 Ω (max) (@VGS = 4.
5 V)
: Ron = 3.
2 Ω (max) (@VGS = 5 V) : Ron = 3.
0 Ω (max) (@VGS = 10 V)
Unit: mm 2.
1± 0.
1 1.
25 ± 0.
1
+0.
1 0.
3 - 0
2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
60
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
No...