2SK3397
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3397
Relay Drive and DC-DC Converter Applications Motor Drive Applications
z z Low drain-source ON resistance: RDS (ON) = 4.
0 mΩ (typ.
) High forward transfer admittance: |Yfs| = 110 S (typ.
) Unit: mm
z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) com z Enhancement mode: Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 125 273 70 12.
5 150 −55 to150 Unit V V V A W mJ A...