DatasheetsPDF.com

K3306

NEC
Part Number K3306
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOS FET
Published Aug 3, 2006
Detailed Description www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE O...
Datasheet PDF File K3306 PDF File

K3306
K3306

Overview
www.
DataSheet4U.
com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES • Low gate charge : 5 QG = 13 nC TYP.
(VDD = 400 V, VGS = 10 V, ID = 5.
0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 1.
5 Ω MAX.
(VGS = 10 V, ID = 2.
5 A) • Avalanche capability ratings • Isolated TO-220(MP-45F) package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg 500 ±30 ±5 ±20 35 2.
0 150 –55 to +150 5.
0 125 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14004EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 1999 www.
DataSheet4U.
com 2SK3306 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2.
5 1.
0 3.
0 1.
35 700 115 6 16 3 33 5.
5 13 4 4.
5 1.
0 0.
7 3.
3 1.
5 MIN.
TYP.
MAX.
100 ±100 3.
5 UNIT TEST CONDITION...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)