MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF323/D
The RF Line
NPN Silicon RF Power
Transistor
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designed primarily for wideband large–signal driver and predriver amplifier stages in the 200– 500 MHz frequency range.
• Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50% Min • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability
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MRF323
20 W, 400 MHz RF POWER
TRANSISTOR NPN SILICON
• Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base V...