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MRF3010

Motorola
Part Number MRF3010
Manufacturer Motorola
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
Published Oct 8, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3010/D The RF MOSFET Line RF Power Field Effect Tran...
Datasheet PDF File MRF3010 PDF File

MRF3010
MRF3010


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3010/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for IMARSAT satellite up link at 1.
6 to 1.
64 GHz, 28 volts, Class AB, CW amplifier applications.
D • Guaranteed Performance @ 1.
6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.
5 dB @ 10 Watts Minimum Efficiency = 45% @ 10 Watts • High Gain, Rugged Device • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances • Broadband Performance of This Device Makes It Ideal for Applications from 800 to 1700 MHz, Common–Source Class AB Operation.
• Typical Performance at Class A Operation: Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A, Gain = 12.
5 dB, IMD = –32 dB • Capable of Handling 30:1 VSWR, @ 28 Vdc • Circuit Board Available Upon Request by Contacting RF Tactical Marketing in Phoenix, AZ MRF3010 10 W, 1.
6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET www.
DataSheet4U.
com G CASE 360B–01, STYLE 1 S • Characterized with Small–Signal S–Parameters from 500 to 2500 MHz MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value 65 ± 20 – 65 to +150 200 Unit Vdc Vdc °C °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 1 µA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 10 1 Vdc µAdc µAdc NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1 RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1998 MRF3010 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage (...


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