CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
Spec.
No.
: C848D3 Issued Date : 2004.
07.
06 Revised Date : Page No.
: 1/4
BTD2150AD3
Features
• Low VCE(sat), VCE(sat)=0.
25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics com • Complementary to BTB1424AD3
Symbol
BTD2150AD3
Outline
TO-126ML
B：Base C：Collector E：Emitter EC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cy...