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BTD2150AE3

Cystech Electonics
Part Number BTD2150AE3
Manufacturer Cystech Electonics
Description NPN Epitaxial Planar Transistor
Published Oct 15, 2008
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848E3 Issued Date : 2004.07.06 Revise...
Datasheet PDF File BTD2150AE3 PDF File

BTD2150AE3
BTD2150AE3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor Spec.
No.
: C848E3 Issued Date : 2004.
07.
06 Revised Date : Page No.
: 1/5 BTD2150AE3 Features • Low VCE(sat), VCE(sat)=0.
25 V (typical), at IC / IB = 2A / 50mA • Excellent current gain characteristics www.
DataSheet4U.
com • Complementary to BTB1424AE3 Symbol BTD2150AE3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits 80 50 6 3 7 (Note) 1 1.
8 25 150 -55~+150 Unit V V V A A W °C °C BTD2150AE3 CYStek Product Specification CYStech Electronics Corp.
Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *V CE(sat) www.
DataSheet4U.
com *VBE(sat) *hFE fT Cob ton tstg tf Min.
80 50 6 180 Typ.
0.
25 15 50 0.
8 3 1.
2 Max.
10 10 0.
5 2 820 Unit V V V µA µA V V MHz pF µs µs µs Spec.
No.
: C848E3 Issued Date : 2004.
07.
06 Revised Date : Page No.
: 2/5 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=80V, IE=0 VEB=6V, IC=0 IC=2A, IB=50mA IC=2A, IB=200mA VCE=4V, IC=500mA VCE=12V, IC=200mA, f =10MHz VCB=10V, f=1MHz VCC=20V, IC=1A, IB1=15mA, IB2=-30mA,RL=20Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range R 180~390 S 270~560 T 390~820 BTD2150AE3 CYStek Product Specification CYStech Electronics Corp.
Characteristic Curves Grounded Emitter Output Characteristics 140 Collector Current---IC(mA) Collector Current---IC(mA) 120 100 80 500uA 400uA 300uA 200uA 100uA IB=0uA Spec.
No.
: C848E3 Issued Date : 2004.
07.
06 Revised Date : Page No.
: 3/5 Grounded Emitter Output Characteristics 700 600 500 400 300 200 100 0 6 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2.
5mA 2mA 1.
5mA 1mA 500...


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