Directed Energy, Inc.
An DE150-101N09A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.
DataSheet4U.
com VDSS ID25 RDS(on) Maximum Ratings 100 100 ±20 ±30 9.
0 54 14 7.
5 5.
5 200 80 3.
5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 100 V 9.
0 A 0.
16 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB T...

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