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DE150-101N09A

Part Number	DE150-101N09A
Manufacturer	Directed Energy
Description	RF Power MOSFET
Published	Oct 23, 2008
Detailed Description	Directed Energy, Inc. An DE150-101N09A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode...
Datasheet	DE150-101N09A PDF File

Overview

Directed Energy, Inc.
An DE150-101N09A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.
DataSheet4U.
com VDSS ID25 RDS(on) Maximum Ratings 100 100 ±20 ±30 9.
0 54 14 7.
5 5.
5 >200 80 3.
5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 100 V 9.
0 A 0.
16 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol DRAIN Tc = 25°C Derate 4.
4W/°C above 25°C Tc = 25°C SD1 SD2 1.
6mm (0.
063 in) from case for 10 s 300 2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min.
VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.
8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.
5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.
5ID25, pulse test typ.
max.
V 100 2 3 4 ±100 25 250 0.
16 4.
6 8.
0 V nA µA µA Ω S Advantages • Optimized for RF and high speed switching at frequencies to >100MHz • Easy to mount—no insulators needed • High power density Directed Energy, Inc.
An DE150-101N09A RF Power MOSFET IXYS Company Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min.
typ.
max.
5 650 VGS = 0 V, VDS = 0.
8 VDSS(max), f = 1 MHz Symbol RG Ciss Coss Crss www.
DataSheet4U.
com Ω pF pF pF ns ns...

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DE150-101N09A RF Power MOSFET - Directed Energy

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