FPD750SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1.
85GHZ):
•
• • • • •
Datasheet 3.
0
PACKAGE:
RoHS
25 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG) 0.
6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC)
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GENERAL DESCRIPTION:
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT).
It utilizes a 0.
25 µm x 750 µm
Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linear...