DatasheetsPDF.com

FPD750SOT89

Filtronic Compound Semiconductors
Part Number FPD750SOT89
Manufacturer Filtronic Compound Semiconductors
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Published Oct 25, 2008
Detailed Description FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1.85GHZ): • • • • • • Datasheet 3.0 PACKAGE: RoHS 25 dB...
Datasheet PDF File FPD750SOT89 PDF File

FPD750SOT89
FPD750SOT89

Overview
FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1.
85GHZ): • • • • • • Datasheet 3.
0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.
6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www.
DataSheet4U.
com GENERAL DESCRIPTION: The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linear...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)