INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC4368
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min) ·Complement to Type 2SA1657
APPLICATIONS ·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5.
0 V
IC Collector Current-Continuous
1.
5 A
IB Base Current-Continuous
Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃
TJ Junction Temperature
Tstg Storage Temperature
0.
5 A
20 W
2
150 ℃
-55~150 ℃
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