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C4315

Toshiba
Part Number C4315
Manufacturer Toshiba
Description 2SC4315
Published Jun 9, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Un...
Datasheet PDF File C4315 PDF File

C4315
C4315

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain.
· NF = 1.
1dB, |S21e|2 = 14dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.
012 g (typ.
) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ.
Max Unit 5 7 ¾ GHz ¾ 10.
5 19.
5 14 ¾ ¾ dB ¾1¾ dB ¾ 1.
1 2 Ele...


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