AO6601 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO6601 uses advanced trench technology to com provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications).
AO6601L is a Green Product ordering option.
AO6601 and AO6601L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 3.
4A (VGS = 10V) -2.
3A (VGS = -10V) RDS(ON) 60m Ω (VGS = 10V) 135m Ω (VGS = -10V) 75m Ω (VGS = 4.
5V) 185m Ω (VGS = -4.
5V) 115m Ω(VGS = 2.
5V) 265m Ω (VGS = -2.
5V)
D1 TSOP6...