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AO6603

Alpha & Omega Semiconductors
Part Number AO6603
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Nov 18, 2008
Detailed Description AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench techno...
Datasheet PDF File AO6603 PDF File

AO6603
AO6603

Overview
AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R www.
DataSheet4U.
com DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications).
AO6603L is a Green Product ordering option.
AO6603 and AO6603L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 20V ID = 1.
7 (VGS = 4.
5V) -2.
5A RDS(ON) < 225mΩ (VGS = 4.
5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.
5V) < 425m Ω (VGS = 1.
8V) < 185m Ω (VGS = 2.
5V) < 265m Ω (VGS = 1.
8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±12 -2.
3 -1.
8 -30 1.
15 0.
73 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 1.
7 1.
4 15 1.
15 0.
73 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6603 N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250 µA VGS=4.
5V, V DS=5V VGS=4.
5V, I D=1.
7A Static Drain-Source On-Resistance TJ=125°C VGS=2.
5V, I D=1A VGS=1.
8V, I D=0.
7A gFS VSD IS Forward Transconductance VDS=5V, ID=1.
7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.
4 5 186 262 241 326 2.
8 0.
69 1 0.
4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.
57 ...


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