AO6603 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO6603 uses advanced trench technology to provide excellent R www.
DataSheet4U.
com DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications).
AO6603L is a Green Product ordering option.
AO6603 and AO6603L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 20V ID = 1.
7 (VGS = 4.
5V) -2.
5A RDS(ON) 225mΩ (VGS = 4.
5V) 135mΩ (VGS = -10V)
290m Ω (VGS = 2.
5V) 425m Ω (VGS = 1.
8V) 185m Ω (VGS = 2.
5V) 265m Ω (VGS = 1.
8V)
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